ANALYSIS OF ON-STATE CARRIER DISTRIBUTION IN THE DI-LIGBT

The on-state carrier distribution in the drift region of the DI-LIGBT with thin silicon layers is studied in this paper. Numerical simulatio ns indicate that carrier enhancement due to the formation of an accumu lation region underneath the gate near the emitter has a strong impact on the on-state carrier distribution. This results in improved on-sta te characeristics by reducing the middle region voltage drop, due to t he enhanced conductivity modulation of the drift region. A simple one- dimensional analytical modeling is carried out to study the effect of this carrier enhancement on on-state voltage drop. The results are ver ified by measurements performed on DI-LIGBTs fabricated on 5 and 10 mu m thick silicon layers. (C) 1997 Elsevier Science Ltd.