PACVD-derived thin films in the system Si-B-C-N

Authors
Hegemann, D Riedel, R Oehr, C
Citation
D. Hegemann et al., PACVD-derived thin films in the system Si-B-C-N, CHEM VAPOR, 5(2), 1999, pp. 61
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
5
Issue
2
Year of publication
1999
Database
ISI
SICI code
0948-1907(199903)5:2<61:PTFITS>2.0.ZU;2-O
Abstract
PACVD has been used to obtain SIBCN thin films for the first time at low te mperatures (250 degrees C) from a single-sourer precursor. Tn comparison wi th PACVD BCN, the B:C ratio is the same, but there is a slightly increased N content, and the presence of Si improves the hardness and adhesion charac teristics. XPS and FTIR results suggest that most Si atoms are bonded to N and C, with the C being mainly sp(2)/sp(3) hybridized CC and C-N bonds, whi le B is bonded to N, also with sp(2)/sp(3) hybridization.