Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films

Citation
Ja. Belot et al., Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films, CHEM VAPOR, 5(2), 1999, pp. 65
Citations number
40
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
5
Issue
2
Year of publication
1999
Database
ISI
SICI code
0948-1907(199903)5:2<65:HVLFPF>2.0.ZU;2-V
Abstract
Three new homoleptic lanthanide coordination complexes have been synthesize d and characterized. The compounds (e.g. see Figure) have been designed as F-free MOCVD precursors. They are monomeric in the solid state and are high ly volatile liquids under typical deposition conditions. Their viability ha s been demonstrated by the growth of ceria on yttria and sapphire.