7W CW power from tensile-strained GaAsyP1-y/AlGaAs (lambda = 735 nm) QW diode lasers

Authors
Knauer, A Erbert, G Wenzel, H Bhattacharya, A Bugge, F Maege, J Pittroff, W Sebastian, J
Citation
A. Knauer et al., 7W CW power from tensile-strained GaAsyP1-y/AlGaAs (lambda = 735 nm) QW diode lasers, ELECTR LETT, 35(8), 1999, pp. 638-639
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
8
Year of publication
1999
Pages
638 - 639
Database
ISI
SICI code
0013-5194(19990415)35:8<638:7CPFTG>2.0.ZU;2-E
Abstract
100 mu m-stripe lasers with a tensile-strained GaAsyP1-y quantum well embed ded in a low-loss AlGaAs large-optical-cavity structure provide a record-hi gh CW power of 7W at 735nm from 2mm-long devices. The transverse beam patte rn has a narrow 25 degrees beamwidth. Reliability tests at the 0.5W CW powe r level suggest lifetimes > 10(4)h.