Electrothermal characterisation of high power microwave silicon bipolar transistor

Authors
Bouysse, P Quere, R Villotte, JP Carves-Bideaux, N Coupat, JM
Citation
P. Bouysse et al., Electrothermal characterisation of high power microwave silicon bipolar transistor, ELECTR LETT, 35(8), 1999, pp. 666-667
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
8
Year of publication
1999
Pages
666 - 667
Database
ISI
SICI code
0013-5194(19990415)35:8<666:ECOHPM>2.0.ZU;2-I
Abstract
An original approach to extracting the thermal equivalent circuits of bipol ar transistors is described. This work is based on specific pulsed, DC and thermal measurements that allow various thermal time constants effects to b e separated. The proposed modelling method is applied to determine the ther mal behaviour of a high power microwave silicon bipolar transistor.