High-performance collector-up InGaP/GaAs heterojunction bipolar transistorwith Schottky contact

Authors
Girardot, A Henkel, A Delage, SL Diforte-Poisson, MA Chartier, E Floriot, D Cassette, S Rolland, PA
Citation
A. Girardot et al., High-performance collector-up InGaP/GaAs heterojunction bipolar transistorwith Schottky contact, ELECTR LETT, 35(8), 1999, pp. 670-672
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
8
Year of publication
1999
Pages
670 - 672
Database
ISI
SICI code
0013-5194(19990415)35:8<670:HCIHBT>2.0.ZU;2-H
Abstract
The first fabrication and RF characterisation of an InGaP/GaAs single heter ojunction bipolar transistor in collector-up topology with Schottky contact are reported. Boron implantation is employed to prevent current injection into the extrinsic base region. Realised devices exhibit F-MAX = 110GHz and breakdown voltage BVCEO = 16V. The RF gain of these components appears to be less sensitive to HBT development than standard emitter-up HBTs.