Optimum MOS power matching by exploiting non-quasistatic effect

Authors
Janssens, J Steyaert, M
Citation
J. Janssens et M. Steyaert, Optimum MOS power matching by exploiting non-quasistatic effect, ELECTR LETT, 35(8), 1999, pp. 672-673
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
8
Year of publication
1999
Pages
672 - 673
Database
ISI
SICI code
0013-5194(19990415)35:8<672:OMPMBE>2.0.ZU;2-1
Abstract
Low-noise and power amplifiers commonly use inductive degeneration to match the inherently capacitive MOS device to the source impedance R-S. It is sh own how this matching technique can be refined by incorporating the nonquas istatic effect and further improved so as to strongly increase the gain. It is shown that the maximum gain is achieved by matching the source impedanc e R-S to the intrinsic gate resistance embodying the non-quasistatic effect .