Reactive ion etching of gallium nitride by methylchloride/hydrogen

Authors
Dineen, M Thomas, H Humphreys, B McMeekin, SG
Citation
M. Dineen et al., Reactive ion etching of gallium nitride by methylchloride/hydrogen, ELECTR LETT, 35(8), 1999, pp. 673-675
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
8
Year of publication
1999
Pages
673 - 675
Database
ISI
SICI code
0013-5194(19990415)35:8<673:RIEOGN>2.0.ZU;2-J
Abstract
The authors report on the reactive ion etching (RIE) of gallium nitride (Ga N) using methylchloride/hydrogen, (CH3Cl/H-2). The effect of RF power, tota l gas flow, pressure and gas ratio chemistry on etch rate were investigated and the optimum process identified. Etch rates of 100nm/min were obtained using the optimised process conditions.