Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation

Thin films of GaSb were transferred to insulating substrates by a combinati on of wafer bonding and separation by hydrogen ion implantation. Hydrogen i on implantation and exfoliation were successfully exploited to transfer a 2 40nm thick GaSb film to a glass substrate at temperatures less than or equa l to 150 degrees C. A novel room temperature wafer bonding technique utilis ing an ultraviolet/ozone process was also demonstrated. The films have been characterised by atomic force and scanning electron microscopies.