A new extrapolation law for data-retention time-to-failure of nonvolatile memories

In this letter, we demonstrate that the commonly assumed:Arrhenius law is i nconsistent with extrapolation of data-retention time-to-failure of nonvola tile memories in highly accelerated life-tests. We argue that the retention time, namely log(t(R)), varies linearly with temperature T rather than wit h 1/T as commonly assumed, yielding an important reduction in the extrapola ted time-to-failure. Extensive experimental results demonstrate the physica l consistency of the new model. In particular, data-retention of EPROM devi ces and leakage current of interpoly dielectric and gate oxide have been in vestigated over a wide range of temperatures. Finally, it is shown that our model reconciles seemingly controversial activation energy data from the l iterature.