Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

We have developed a simple process to form epitaxial CoSi2 for shallow junc tion. Prior to metal deposition, the patterned wafers were treated with HF- vapor passivation. As observed by scanning tunneling microscopy (STM), this HF, treatment drastically improves the native oxide-induced sur face rough ness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM), Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, whi ch is consistent with STM and TEM results.