Carrier lifetime extraction in fully depleted dual-gate SOI devices

Authors
Ernst, T Vandooren, A Cristoloveanu, S Colinge, JP Flandre, D
Citation
T. Ernst et al., Carrier lifetime extraction in fully depleted dual-gate SOI devices, IEEE ELEC D, 20(5), 1999, pp. 209-211
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
5
Year of publication
1999
Pages
209 - 211
Database
ISI
SICI code
0741-3106(199905)20:5<209:CLEIFD>2.0.ZU;2-J
Abstract
A new method for;extracting the carrier recombination lifetime in dual-gate silicon-on-insulator (SOI) structures is proposed. The experiment, model, and numerical simulations indicate that an excess forward current is obtain ed when carrier recombination occurs in the whole film volume.