Hydrogenation of polysilicon thin-film transistor in a planar inductive H-2/Ar discharge

A planar inductive discharge is used to hydrogenate polysilicon thin-film t ransistors (poly-Si TFT's). Experimental results indicate that inductive di scharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time. In addition, to promote the ionization of hydrogen, Ar gas is also introduced to H-2 plasma during hydrogenation. Furthermore, me discuss the mechanism of Ar enhanced hydrogenation and the characterist ics of H-2/Ar mixed plasma. Moreover, the posthydrogenation anneal is utili zed to further enhance passivation efficiency and improve the reliability o f poly-Si TFT's.