Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers

We present a comprehensive model for the calculation of the bandedge profil e of both the In1-xGaxAsyP1-y and In1-x-yGaxAlyAs quantum-well systems with an arbitrary composition. Using a many-body optical gain model, we compare the measured net modal gain for both material systems with calculations fr om the realistic band structure including valence band mixing effects. Cali brated measurements of the side light spontaneous emission spectrum based o n its fundamental relation to the optical gain spectrum give values for the radiative current density, These measurements allow us to extract the rela tionship between total current density and carrier density, A fit of this r elation yields values for the Auger coefficient for each material system.