J. Minch et al., Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers, IEEE J Q EL, 35(5), 1999, pp. 771-782
We present a comprehensive model for the calculation of the bandedge profil
e of both the In1-xGaxAsyP1-y and In1-x-yGaxAlyAs quantum-well systems with
an arbitrary composition. Using a many-body optical gain model, we compare
the measured net modal gain for both material systems with calculations fr
om the realistic band structure including valence band mixing effects. Cali
brated measurements of the side light spontaneous emission spectrum based o
n its fundamental relation to the optical gain spectrum give values for the
radiative current density, These measurements allow us to extract the rela
tionship between total current density and carrier density, A fit of this r
elation yields values for the Auger coefficient for each material system.