A LOW-POWER GAAS-MESFET CHARGE PREAMPLIFIER

Authors
DEGERONIMO G CASTOLDI A
Citation
G. Degeronimo et A. Castoldi, A LOW-POWER GAAS-MESFET CHARGE PREAMPLIFIER, Nuclear physics. B, 1997, pp. 113-118
Citations number
9
Categorie Soggetti
Physics, Nuclear
Journal title
Nuclear physics. B → ACNP
ISSN journal
05503213
Year of publication
1997
Supplement
54B
Pages
113 - 118
Database
ISI
SICI code
0550-3213(1997):<113:ALGCP>2.0.ZU;2-Q
Abstract
A low-power, high speed and high resolution preamplification and filte ring stage, based on GaAs MESFETs has been designed, produced and test ed. With a total power dissipation of 2mW and with a shaping time of 2 0ns, it is characterized by an Equivalent Noise Charge (ENC) below 180 electrons rms with a 1.25pF detector capacitance and by an ENC below 600 electrons rms with a 5.15pF detector capacitance.