A 1.24-GHz monolithic CMOS VCO with phase noise of -137 dBc/Hz at a 3-MHz offset

Authors
Citation
Cm. Hung et Kk. O, A 1.24-GHz monolithic CMOS VCO with phase noise of -137 dBc/Hz at a 3-MHz offset, IEEE MICR G, 9(3), 1999, pp. 111-113
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
3
Year of publication
1999
Pages
111 - 113
Database
ISI
SICI code
1051-8207(199903)9:3<111:A1MCVW>2.0.ZU;2-6
Abstract
For the first time, a 1.24-GHz CMOS voltage-controlled oscillator (VCO) wit h an integrated resonator which satisfies the global system for mobile comm unications (GSM) phase noise requirement at a 3-MHz offset is presented. Th e measured phase noise is -88, -125, and -137 dBc/Hz at 10-kHz, 600-kHz, an d 3-MHz offsets, respectively. The VCO is implemented in a low-cost 0.8-mu m foundry CMOS process exclusively using pMOS transistors which have greate r than one order of magnitude lower 1/f noise than that of nMOS transistors . The tuning range is similar to 130 MHz for the control voltages between 0 .5 and 3.0 V, The VCO core runs on 22 mA from a 3-V power supply.