Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films with nonplanar geometries

This paper describes limitations of conventional methods of extracting shee t resistance from four-terminal sheet resistors incorporated into electrica l linewidth test structures that are patterned in (110) monocrystalline sil icon-on-insulator (SOI) films, Nonplanar sections of these structures rende r the extraction of sheet resistance by conventional techniques subject to systematic errors, The errors are addressed here by algorithms incorporatin g the results of finite-element current-flow analysis, The intended end app lication is to facilitate the use of the uniquely high repeatability and lo w cost of electrical critical dimension (CD) metrology as a secondary refer ence in a traceability path for CD-reference artifacts.