NUMERICAL-SIMULATION OF SILICON MICROSTRIP DETECTORS

In this work the application of the general-purpose device simulator H FIELDS to the analysis of silicon microstrip detectors is presented. I n the framework of CMS collaboration, a comprehensive device character ization has been performed by means of steady-state (DC) and small-sig nals (AC) numerical analyses. The study of char ge collection dynamics has been carried out as well, by means of transient analysis. Simulat ion results exhibit a good agreement with literature data, and allow f or detailed insights of device behavior. This makes it possible to inv estigate device-performance sensitivity to fabrication and environment al parameters and highlights potential applications of numerical analy sis as a device design and optimization aid.