An analytical symmetric double-gate SOI MOSFET model

In this paper, we present a simple, complete and analytical drain current m odel for symmetic double-gate SOI MOSFETs. The model was developed using a quasi-two-dimensional Poisson's equation. The model, applicable to digital/ analogue circuit simulation, contains the following advanced features: prec ise description of the sub-threshold, near threshold and above-threshold re gions of operation by one single expression; single-piece drain current equ ation, smoothly continuous from the linear region to the saturation region, considering the source/drain resistance; inclusion of important short chan nel effects such as velocity saturation, drain-induced barrier lowering and channel length modulation; self-heating effect due to the low thermal cond uctivity of the buried oxide; impactionization of MOS devices; and the para sitic BJT effect associated with drain breakdown.