A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect

Authors
Awadallah, R Yuan, JS
Citation
R. Awadallah et Js. Yuan, A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect, INT J ELECT, 86(6), 1999, pp. 707-712
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF ELECTRONICS
ISSN journal
00207217 → ACNP
Volume
86
Issue
6
Year of publication
1999
Pages
707 - 712
Database
ISI
SICI code
0020-7217(199906)86:6<707:ANSDOA>2.0.ZU;2-V
Abstract
A new silicon-on-insulator (SOI) device structure is proposed. The new desi gn provides a heat conducting path between the channel and substrate. The d evice has been verified in two-dimensional device simulation. This new stru cture reduces device self-heating and increases the drain of the SOI MOSFET .