Active micromachined integrated terahertz circuits

Schottky barrier diodes have been integrated into on-chip rectangular waveg uides. Two novel techniques have been developed to fabricate diodes with po sts suitable for integration into waveguides. One technique produces diodes with anode diameters of the order of microns with post heights from 90 to 125 microns and the second technique produces sub-micron anodes with post h eights around 20 microns. A method has been developed to incorporate these structures into a rectangular waveguide and provide a top contact onto the anode which could be used as an I.F. output in a mixer circuit. Devices hav e been fabricated and D.C. characterised.