Simulation of ZnSe-based self-electro-optic effect devices

We present computer simulations of self-electro-optic effect devices in dif ferent circuit environments, based on the quantum confined Stark effect in wide-gap materials with strong excitonic features. Our work is founded on a microscopic model of the electric field dependent absorption in ZnCdSe/ZnS Se quantum well structures, taking full account of Coulomb induced intersub band coupling and strong excitonic effects, which is essential for all wide -gap materials and distinguishes our theory from standard models of III-V c ompounds. Optical bistability and even multistability are predicted from th e electro-optical and optical input-output characteristics for a wide range of operating conditions. The dependence upon the optical frequency, bias v oltage, length of the waveguide and quantum well width, and possible optimi zation of the performance of the electro-optic modulator are discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)03610-5].