Enhanced electron attachment to Rydberg states in molecular hydrogen volume discharges

Citation
La. Pinnaduwage et al., Enhanced electron attachment to Rydberg states in molecular hydrogen volume discharges, J APPL PHYS, 85(10), 1999, pp. 7064-7069
Citations number
64
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
10
Year of publication
1999
Pages
7064 - 7069
Database
ISI
SICI code
0021-8979(19990515)85:10<7064:EEATRS>2.0.ZU;2-7
Abstract
We review recent studies on negative ion formation and studies in other are as that are relevant to the role of high-Rydberg states of H-2 and H-3 in h ydrogen negative ion sources. Possible mechanisms for the formation of thes e excited states are discussed, including the formation of long-lived super excited (core-excited) Rydberg states. Experimental evidence for negative i on formation via electron attachment to core-excited Rydberg states in a gl ow discharge apparatus is presented. An expression for the dissociative ele ctron attachment rate constant for Rydberg molecules is derived based on el ectron capture by a Rydberg molecule due to polarization interaction. (C) 1 999 American Institute of Physics. [S0021-8979(99)03310-1].