A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiC

1.7 MeV electron irradiation-induced deep levels in p-type 6H-SiC have been studied using deep level transient spectroscopy. Two deep hole traps are o bserved, which are located at E-V+0.55 eV and E-V+0.78 eV. They have been i dentified as two different defects because they have different thermal beha viors. These defects at E-V+0.55 eV and E-V+0.78 eV are annealed out at 500 -200 degrees C, respectively, and are different from the main defects E1/E2 , Z1/Z2 observed in electron irradiated n-type 6H-SiC. This indicates that new defects have been formed in p-type 6H-SiC during electron irradiation. (C) 1999 American Institute of Physics. [S0021-8979(99)05010-0].