Electroluminescence simulation of multiquantum well silicon structures

A model of electroluminescence from the multiquantum well structure formed by alternated nanosize layers of silicon (Si) and calcium fluoride (CaF2) i s proposed. Electron and hole tunneling through the CaF2 barriers is suppos ed to occur via Wentzel-Kramers-Brillouin mechanism. Carrier interband reco mbination in the Si wells is considered to produce photons. A simulation of current-voltage characteristics and luminescence properties is performed t aking into account the geometry of the structure and the fundamental physic al parameters of the materials involved. The electroluminescence is found t o be characterized by a maximum intensity depending on the number of period s in the multiquantum wells. The electroluminescence intensity shows also a nonmonotonous dependence on the recombination coefficient and carrier conc entration at the contacts. (C) 1999 American Institute of Physics. [S0021-8 979(99)01010-5].