Photoluminescence study on the effects of the surface of CdTe by surface passivation

Citation
Yh. Kim et al., Photoluminescence study on the effects of the surface of CdTe by surface passivation, J APPL PHYS, 85(10), 1999, pp. 7370-7373
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
10
Year of publication
1999
Pages
7370 - 7373
Database
ISI
SICI code
0021-8979(19990515)85:10<7370:PSOTEO>2.0.ZU;2-0
Abstract
The etching effects on the CdTe surface treated by the different chemical e tchants, such as 2% Br-methanol (BM) and 2% Br-20% latic acid in ethylene g lycol (BLE) solutions are studied by both photoluminescence (PL) and atomic force microscopy. After etching, the dielectric materials ZnS and CdZnTe a re used for the passivation of the CdTe surface. The PL studies of the CdTe surfaces passivated by the dielectrics are carried out, and the results ar e correlated with the value of the lifetime of the CdTe. The results show t hat the etching of CdTe surface by BLE solution yields the better surface c ondition for CdTe. The surface trap states of CdTe are reduced by the CdZnT e and ZnS passivant which results in the increase in the surface lifetime o f CdTe. (C) 1999 American Institute of Physics. [S0021-8979(99)00909-3].