Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy

We report the transport and photoluminescence (PL) properties of silicon-do ped GaInP layers grown on GaAs (100) substrate using a valved phosphorus cr acker cell in solid source molecular beam epitaxy. Within the range of sili con (Si) effusion cell temperature investigated (900-1200 degrees C), the h ighest electron concentration obtained was 7.7X10(18) and 3.2X10(18) cm(-3) at room temperature and 77 K, respectively. The concentration decreased wi th further increase in the silicon cell temperature. The Hall mobility at 3 00 K varied from 356 to 1720 cm(2)/V s within the range of electron concent ration measured (4.5X10(16)-7.7X10(18) cm(-3)). Except for the sample grown at the highest silicon cell temperature (1200 degrees C), the PL spectrum of other samples showed a dominant peak attributed to Si donor-to-band tran sition (D-B), which shifted to higher energy following an increase in the e lectron concentration. This phenomenon was attributed to the Burstein-Moss effect. The blueshift of the (D-B) transition peak at increasing temperatur e was attributed to thermal ionization of the Si donors. The sample grown a t the highest Si cell temperature showed a PL peak at similar to 1.913 eV w hich was attributed to transition between the conduction band and Si accept or (B-A), with an activation energy of similar to 57.2 meV as deduced from the PL spectrum. Temperature-dependent Hall measurements confirmed the amph oteric behavior of the Si dopant in this sample. The PL intensity at 10 K d ecreased and the full width at half maximum increased significantly from si milar to 8 to similar to 32 meV following an increase in the electron conce ntration from 4.5 X10(16) to 7.7X10(18) cm(-3). (C) 1999 American Institute of Physics. [S0021-8979(99)00410-7].