The photon energy dependence of vacuum ultraviolet light-induced stress was
investigated for two types of silica glass, type I (GE214) and type III (S
uprasil P20). Samples of both glass types were irradiated under three condi
tions: (1) with xenon (Xe) arc light directly, (2) through three kinds of f
iltered Xe arc light, and (3) with a high-pressure mercury (Hg) lamp. To ev
aluate the samples, the absorption spectra were measured in vacuum ultravio
let (VUV), UV, and infrared regions. The irradiation-induced stress was als
o measured. The relative shape of the Xe arc spectrum was derived, and the
absorption spectra of GE214 and Suprasil P20 were determined in the VUV reg
ion at the Xe lamp operation temperature. The measured stress was converted
to strain energy, which was then corrected with respect to the hydroxyl gr
oup (=SiOH) content and the irradiation time. The results revealed that the
corrected strain energy was linearly proportional to the amount of absorbe
d light within the measurement error. The photon energy threshold for induc
ing the strain was evaluated to be 5.6 eV for GE214, at which the absorptio
n coefficient was similar to 10 cm(-1). In contrast, light absorption occur
red at photon energy not less than 6.5 eV for Suprasil P20. Therefore, ther
e is a photon energy dependence on the VUV induced stress. This dependence
varies not only with the type of silica glass but also its ambient temperat
ure which, in turn, controls the absorption coefficient. In fact, the estim
ated absorption coefficient at 7.5 eV and at 743 K for GE214 was about two
orders of magnitude higher than that measured at room temperature. The bond
cleavage and rearrangement of the silica glass network should be enhanced
by heat. The analysis of these photon energy dependences also suggested tha
t Suprasil P20 was strained more effectively than GE214, probably due to ab
sorption of VUV light by = SiOH s contained in silica glass. (C) 1999 Ameri
can Institute of Physics. [S0021-8979(99)02610-9].