Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996)

Micro-Raman spectroscopy is often applied to measure local mechanical stres s in silicon microelectronics devices. A procedure was proposed [De Wolf et al., J. Appl. Phys. 79, 7148 (1996)] for deriving quantitative information about the stress from the Raman spectra. The calculations were shown to be less tedious when performed in the reference system of the sample, as sugg ested by Anastassakis [Light Scattering in Semiconductor Structures and Sup erlattices, (Plenum, New York, 1991), p. 173]. However, there are a few err ors in some equations in De Wolf et al. We give here the correct equations, and discuss the consequences of the errors. An alternative convenient appr oach is recommended. (C) 1999 American Institute of Physics. [S0021-8979(99 )03510-0].