InAs quantum dots in Al(Ga)As cladding layers: The choice for 0-dimensional energy level engineering?

Authors
Lee, UH Lee, D Kim, YS Rhee, SJ Leem, YA Ko, HS Kim, DH Woo, JC Lee, HG Noh, SK Leem, JY Lee, HJ
Citation
Uh. Lee et al., InAs quantum dots in Al(Ga)As cladding layers: The choice for 0-dimensional energy level engineering?, J KOR PHYS, 34, 1999, pp. S42-S45
Citations number
11
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S42 - S45
Database
ISI
SICI code
0374-4884(199904)34:<S42:IQDIAC>2.0.ZU;2-4
Abstract
We report on a self-assembled InAs quantum dot (QD) system whose energy lev el can be varied from 1070 nm to 700 nm by changing aluminum composition in an AlxGa1-xAs matrix. The photoluminescence from the QD structures were st rong at low temperature and stayed high even at room temperature, due to th e reduced thermal activation. The characteristics suggest that this highest strained QD system in the alloy matrix could be the choice for the QD ener gy level engineering and QD applications.