Photoelectric properties by interface effect of organic/inorganic(CuPc/PbTe) multilayer prepared by pulsed laser deposition and thermal evaporation

Citation
H. Lee et al., Photoelectric properties by interface effect of organic/inorganic(CuPc/PbTe) multilayer prepared by pulsed laser deposition and thermal evaporation, J KOR PHYS, 34, 1999, pp. S64-S68
Citations number
10
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S64 - S68
Database
ISI
SICI code
0374-4884(199904)34:<S64:PPBIEO>2.0.ZU;2-S
Abstract
Highly crystallized CuPc/PbTe multilayer are prepared at substrate temperat ure from room temperature to 300 degrees C by pulsed laser deposition and t hermal evaporation method. From the measurement of AFM image, these all fil m exhibits composed of round grains and flat matrix. For observation the in terface effect of multilayer, we measured the transverse current-voltage ch aracteristics in the dark and under illumination. The photocarrier is gener ated in the CuPc layer and the electron-hole pairs are separated by the ste ep incline of the potential near the CuPc/PbTe interface. The CuPc/PbTe mul tilayers in the in-plane current-voltage curve exhibit larger photoconducti on effect than that of CuPc single layer.