1.5 mu m InGaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating

Authors
Luo, Y Wen, GP Gan, YN Zhang, KQ Sudoh, TK Sudo, S Nakano, Y Tada, K
Citation
Y. Luo et al., 1.5 mu m InGaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating, J KOR PHYS, 34, 1999, pp. S101-S103
Citations number
10
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S101 - S103
Database
ISI
SICI code
0374-4884(199904)34:<S101:1MMISM>2.0.ZU;2-J
Abstract
A 1.55 mu m InGaAsP/InP strained multiple quantum well (MQW) distributed fe edback (DFB) laser with an improved periodically modulated injection-carrie r grating is reported for the first time. In this laser structure, the effe ct of current blocking grating is enhanced by optimizing the doping level o f its surrounding layers, therefore, large gain coupling coefficient can be expected. The device is fabricated by hybrid growth of MOVPE and LPE. A si ngle-mode oscillation yield as high as 80 % is achieved under the condition of two cleaved facets.