Coulomb blockade in turnstile with multiple tunnel junctions

Citation
Sc. Lee et al., Coulomb blockade in turnstile with multiple tunnel junctions, J KOR PHYS, 34, 1999, pp. S109-S114
Citations number
11
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S109 - S114
Database
ISI
SICI code
0374-4884(199904)34:<S109:CBITWM>2.0.ZU;2-0
Abstract
On the basis of the analytic solutions to the electrostatic problem of the multi-gated-small-junction systems, the stable domain for the Coulomb block ade of turnstle with multiple tunnel junctions at zero temperature has been analyzed as a function of the number of tunnel junction, the ratio of the gate capacitance to the junction capacitance, and the asymmetric factor. Ou r results show that domains form various shaped regions according to the as ymmetric factor and their size depends on the number of junction and the ra tio of the gate capacitance to the junction capacitance. In particular, it is shown that electrons can be transferred in positive and/or negative bias voltage depending on the asymmetric factor the asymmetric factor plays an important role in when an appropriate gate cycle is applied. Thus, determin ing the turnstile operation.