Thermoelastic stresses and curvatures arising from patterned thin lines on
initially flat isotropic substrates are analyzed. A connection is made betw
een substrates with patterned lines and laminated anisotropic composites co
ntaining transverse matrix cracks. Using this analogy along with anisotropi
c plate theories, approximate analytical expressions are derived for volume
-averaged stresses as well as curvatures along and normal to the lines, for
any thickness, width and spacing of the lines. The predictions of the anal
ysis are shown to compare favorably with finite element simulations of stre
sses and curvatures for Si substrates with Al, Cu or SiO2 lines. The predic
tions also match prior experimental measurements of curvatures along and no
rmal to patterned SiO2 lines on Si wafers, and further capture the general
experimental trends reported previously for curvature evolutions in Si wafe
rs with Al lines. The model presented here thus provides a very convenient
and simple analytical tool for extracting stresses in thin lines on substra
tes from a knowledge of experimentally determined film stress, thereby circ
umventing the need for detailed computations for a wide range of unpassivat
ed line geo metries of interest in microelectronic applications. (C) 1999 E
lsevier Science Ltd. All rights reserved.