Ge. Fanucci et Dr. Talham, Langmuir-Blodgett films based on known layered solids: Lanthanide(III) octadecylphosphonate LB films, LANGMUIR, 15(9), 1999, pp. 3289-3295
Several lanthanide(III) octadecylphosphonate Langmuir-Blodgett (LB) films h
ave been prepared and characterized. Films with La3+, Ce3+, Sm3+, and Gd3+,
, formed one bilayer at a time using a Y-type deposition procedure that all
ows the metal phosphonate continuous lattice network to crystallize during
the upstroke of the film transfer. Comparison of the phosphonate IR stretch
ing modes of the LB films to those of known model solids shows that each fi
lm is an LB analogue of the powdered solid-state lanthanide butylphosphonat
es of formula Ln(III)H(O3PC4H9)(2) that possess a two-dimensional ionic cov
alent metal phosphonate network. X-ray photoelectron spectroscopy (XPS) sho
ws that the P/Ln ratio in each of the transferred films is 2:1, which corre
sponds to the stoichiometry in the known layered materials, and X-ray diffr
action (XRD) shows that the films are layered each with a bilayer thickness
of 51 +/- 1 Angstrom. The behavior of octadecylphosphonic acid Langmuir mo
nolayers on subphases containing each metal ion is studied as a function of
pH, and general procedures for the deposition of metal phosphonate continu
ous lattice LB films are developed.