Preparation, crystal structure and electrical properties of Cu4SnS6

Citation
Xa. Chen et al., Preparation, crystal structure and electrical properties of Cu4SnS6, MATER RES B, 34(2), 1999, pp. 239-247
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
34
Issue
2
Year of publication
1999
Pages
239 - 247
Database
ISI
SICI code
0025-5408(19990115)34:2<239:PCSAEP>2.0.ZU;2-S
Abstract
Single crystals of Cu4SnS6 were grown in an eutectic flux of 54% KCl and 46 % LiCl. The X-ray crystal structure analysis showed that Cu4SnS6 crystalliz es in a new layered structure with rhombohedral symmetry: R (3) over bar m, a = 3.739(1), c = 32.941(7) Angstrom, Z = 2, R = 0.037 for 188 reflections and 18 variables. The crystal structure comprises structural slabs of four sulfur layers. Three of those slabs are stacked rhombohedrally along the c axis and connected by S-S bonds to build the unit cell. 0.661(6) Sn and 0. 326(6) Cu atoms are statistically distributed over the octahedral voids, wi th the Cu atoms moving toward two opposite triangular sulfur faces, and pes t of the Cu atoms in Cu4SnS6 occupy the tetrahedral holes. The overall laye r sequence is B alpha AcB beta A\A gamma CbA alpha C\C beta BaC gamma B. El ectrical conductivity measurements indicate that Cu4SnS6 might be metallic. (C) 1999 Elsevier Science Ltd.