Authors
Citation
H. Kobayashi et Wm. Gibson, Depth profiling of ultrashallow implanted P using NRA, NUCL INST B, 152(2-3), 1999, pp. 365-369
Citations number
11
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
152
Issue
2-3
Year of publication
1999
Pages
365 - 369
Database
ISI
SICI code
0168-583X(199905)152:2-3<365:DPOUIP>2.0.ZU;2-X
Abstract
Depth profiles of ultrashallow implanted P in Si at a dose of 3 x 10(14) cm
(-2) in the energy range of 5-80 keV were investigated by nuclear reaction
analysis (NRA) using a P-31(alpha,p)S-34 reaction. Both projected ranges (R
-p) and range straggling (Delta R-p) are in good agreement with those calcu
lated by TRIM. The accuracy of the dose measurement including reproducibili
ty of this method is better than +/-5%. This method is very useful to impro
ve the quantitative accuracy in ultrashallow depth profiling of P in combin
ation with SIMS. (C) 1999 Elsevier Science B.V. All rights reserved.