Experimental evidence of the enhancement of the low-temperature oxidation rate of titanium films by the Mott potential

Citation
A. Szokefalvi-nagy et E. Fromm, Experimental evidence of the enhancement of the low-temperature oxidation rate of titanium films by the Mott potential, PHIL MAG L, 79(5), 1999, pp. 289-295
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
09500839 → ACNP
Volume
79
Issue
5
Year of publication
1999
Pages
289 - 295
Database
ISI
SICI code
0950-0839(199905)79:5<289:EEOTEO>2.0.ZU;2-C
Abstract
The growth rate of the oxide layer on a titanium film sample at 80 degrees C has been increased by electron bombardment of the oxide surface in the sl ow second stage of oxidation. If the electron beam is switched off, the rea ction rate attains again the normal low value. This effect can be considere d as direct experimental evidence for the effect of the electrostatic Mott potential on the kinetics of the initial stages of low-temperature metal ox idation. The oxide layer growth is enhanced by increasing the potential dif ference across the oxide layer at a thickness where the electron current is no longer able to sustain the equilibrium value of the Mott potential and thus is becoming the rate-determining step of the process.