Scaling, percolation and coarsening in epitaxial thin film growth

Authors
Citation
F. Family, Scaling, percolation and coarsening in epitaxial thin film growth, PHYSICA A, 266(1-4), 1999, pp. 173-185
Citations number
40
Categorie Soggetti
Physics
Journal title
PHYSICA A
ISSN journal
03784371 → ACNP
Volume
266
Issue
1-4
Year of publication
1999
Pages
173 - 185
Database
ISI
SICI code
0378-4371(19990415)266:1-4<173:SPACIE>2.0.ZU;2-N
Abstract
The results of recent theoretical and simulational studies of submonolayer and multilayer homoepitaxial growth is discussed. In the submonolayer regim e, the results provide a quantitative explanation for the variation of the island density, critical island size island morphology and size distributio n and island coalescence and percolation as a function of temperature and d eposition rate. In multilayer growth, a realistic model for homoepitaxial g rowth on fee and bcc lattices is presented which takes into account the cor rect crystal structure. The effects of instabilities which lead to mound fo rmation and coarsening are discussed. An accurate prediction of the observe d mound angle for Fe/Fe(1 0 0) deposition is obtained analytically and by k inetic Monte Carlo simulations. The general dependence of the mound angle, and mound coarsening behavior on temperature, deposition rate, and strength of the step barrier in bcc(1 0 0) and fcc(1 0 0) growth is also presented and compared with recent experiments. (C) 1999 Elsevier Science B.V. All ri ghts reserved.