Stress degradation of low field leakage in alumina gate MOS structures containing RF magnetron sputtered thin Ta2O5 films on silicon

Authors
Novkovski, N Pecovska-Gjorgjevich, M Atanassova, E Dimitrova, T
Citation
N. Novkovski et al., Stress degradation of low field leakage in alumina gate MOS structures containing RF magnetron sputtered thin Ta2O5 films on silicon, PHYS ST S-A, 172(2), 1999, pp. R9-R10
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
172
Issue
2
Year of publication
1999
Pages
R9 - R10
Database
ISI
SICI code
0031-8965(19990416)172:2<R9:SDOLFL>2.0.ZU;2-4