X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe): In system

Citation
Va. Moshnikov et al., X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe): In system, PHYS SOL ST, 41(4), 1999, pp. 550-555
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
4
Year of publication
1999
Pages
550 - 555
Database
ISI
SICI code
1063-7834(199904)41:4<550:XMOQSS>2.0.ZU;2-P
Abstract
A reliable technique of local chemical characterization of multicomponent s emiconductor solid solutions has been developed, and the possibility of its application to the SnTe-SnSe quaternary solid solutions doped with 16 at. % In verified. The behavior of the electrical resistivity of samples of the se solid solutions at low temperatures, 0.4-4.2 K, has been studied. The cr itical temperature T-c and the second critical magnetic field H-c2 of the s uperconducting transition and their dependences on the solid-solution compo sition have been determined. The superconducting transition at T-c approxim ate to 2 - 3 K is due to hole filling of the In-impurity resonance states, and the observed variation of the superconducting transition parameters wit h increasing Se content in the solid solution is related to the extrema in the valence band and the In band of resonance states shifting with respect to one another. (C) 1999 American Institute of Physics. [S1063-7834(99)0100 4-7].