Effect of dissipation on the properties of surface polaritons in GaAs/AlGaAs heterojunctions in a quantizing magnetic field

A study is reported of nonradiative surface and bulk polaritons in GaAs/Alx Ga1-xAs real heterojunctions under conditions favoring integer-quantum Hall effect (IQHE) and in the presence of dissipation in a two-dimensional elec tron layer. The conditions of their existence, the spectrum, and damping ha ve been determined. It is shown that under IQHE conditions all aspects of s urface and bulk polaritons are quantized. It is found that, as the wave num ber is varied, surface and bulk polaritons can transform continuously into one another. The possibilities of experimental observation of nonradiative polaritons are discussed. (C) 1999 American Institute of Physics. [S1063-78 34(99)03004-X].