The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors

Authors
Gasser, I Natalini, R
Citation
I. Gasser et R. Natalini, The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors, Q APPL MATH, 57(2), 1999, pp. 269-282
Citations number
36
Categorie Soggetti
Engineering Mathematics
Journal title
QUARTERLY OF APPLIED MATHEMATICS
ISSN journal
0033569X → ACNP
Volume
57
Issue
2
Year of publication
1999
Pages
269 - 282
Database
ISI
SICI code
0033-569X(199906)57:2<269:TETATD>2.0.ZU;2-9
Abstract
Two relaxation limits of the hydrodynamic model for semiconductors are inve stigated. Using the compensated compactness tools we show the convergence o f (scaled) entropy solutions of the hydrodynamic model to the solutions of the energy transport and the drift-diffusion equations, according respectiv ely to different time scales.