Etch channel elimination in synthetic quartz by electrodiffusion process

Citation
R. Argonz et al., Etch channel elimination in synthetic quartz by electrodiffusion process, RADIAT EFF, 147(1-2), 1998, pp. 17-24
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
147
Issue
1-2
Year of publication
1998
Pages
17 - 24
Database
ISI
SICI code
1042-0150(1998)147:1-2<17:ECEISQ>2.0.ZU;2-#
Abstract
The generation of channels in synthetic quartz by chemical etching is an un desirable effect for technological applications. These etch channels can be suppressed by electrodiffusion (sweeping) processing of specific ions by t he application of a high electric field at temperatures below 570 degrees C . In the present paper we report the study on the operational parameters of the electrodiffusion process for the suppression of etch channels opened b y the action of hydrofluoric acid in Z bars of synthetic quartz. The effici ency to inhibit etch channel formation was evaluated by measuring the densi ty of such channels in samples treated in HF 48% solution for 24 h.