Large area and high sensitivity a-Si : H/a-SiC : H based detectors for visible and ultraviolet light

In this article we discuss the fabrication and performance of a-Si:H/a-SiC: H based ultraviolet sensitive devices. They were deposited over a large ar ea (10 cm x 10 cm) in p-i-n configuration using a new, multichamber, ultrah igh vacuum plasma enhanced chemical vapor deposition facility. The intrinsi c layer thickness was 10-100 nm. The devices were characterized in the spec tral range 365-660 nm and showed good sensitivity in the UV (365 nm). A goo d rejection of visible light was also measured. Responsivity as high as 0.3 0 A/W was measured at 365 nm for samples where the p layer and i layer were 5 and 10 nm thick, respectively. The linearity of the photogenerated curre nt as a function of photon flux was measured. It was found that over an are a of 25 cm(2) the uniformity was within 15%. Using a laser (200 mW at 351 a nd 363 nm) the aging characteristics were measured and showed a 25% decreas e in responsivity after the absorption of 10(5) J cm(-2) under operating co nditions. (C) 1999 American Institute of Physics. [S0034-6748(99)03805-8].