Xd. Zhu et al., Plasma environment during hot cathode direct current discharge plasma chemical vapor deposition of diamond films, SCI CHINA A, 42(3), 1999, pp. 332-336
Citations number
13
Categorie Soggetti
Multidisciplinary
Journal title
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
The plasma characteristics have been investigated in situ by using optical
emission spectroscopy (OES) and the Langmuir probe during hot cathode direc
t current discharge plasma chemical vapor deposition of diamond films. The
changes of atomic H and CH radical in the ground state have been calculated
quantitatively according to the results of OES and the Langmuir probe meas
urement as discharge current density varied. II is shown that atomic H and
CH radicals both in the ground stare and in the excited state increase with
the enhancement of the discharge current density in the plasma. The electr
on density and CH emission intensity increase linearly with the enhancement
of discharge current densities. The generation of different carbon-contain
ing radicals is related to the elevation of electron temperature. Combining
the growth process of diamond films and the diagnostic results, it is show
n that atomic H in the excited state may improve the diamond growth efficie
ntly, and the increase of electron temperature and density plays an importa
nt role in the increase of the deposition rate of diamond films.