Exhaust gas monitoring: New window into semiconductor processing

Citation
M. Richter et al., Exhaust gas monitoring: New window into semiconductor processing, SOL ST TECH, 42(5), 1999, pp. 61
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
42
Issue
5
Year of publication
1999
Database
ISI
SICI code
0038-111X(199905)42:5<61:EGMNWI>2.0.ZU;2-D
Abstract
In situ Fourier transform and nondispersive infrared spectrometry have been successfully coupled into many semiconductor processing systems. These inf rared sensors provide the real-time data required to develop and optimize a process, transfer a process between tools, monitor and control it, determi ne etch and chamber clean end points, and generate fault detection and clas sification information. Infrared absorption spectroscopy allows the process gas to be probed without requiring a plasma or sensing element to interact with the process. Most molecules absorb infrared light with a characterist ic "fingerprint," providing qualitative information for component identific ation. Here we describe alpha and beta tests with tool manufacturers to mon itor and control semiconductor processes.