Atomic structure of the (2 x 4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indiumsegregation

Citation
K. Aid et al., Atomic structure of the (2 x 4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indiumsegregation, SURF SCI, 425(2-3), 1999, pp. 165-173
Citations number
22
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
425
Issue
2-3
Year of publication
1999
Pages
165 - 173
Database
ISI
SICI code
0039-6028(19990420)425:2-3<165:ASOT(X>2.0.ZU;2-M
Abstract
The influence of the average strain and the growth temperature on the surfa ce structure of ternary alloys has been studied by depositing in situ latti ce matched In0.53Ga0.47As on an InP(001)substrate by molecular beam epitaxy . Under As-rich cooling conditions, a (2 x 4) reconstruction has been obser ved, where a specific ordering of cation within the last (In, Ga) plane has been evidenced by in situ grazing incidence X-ray diffraction measurements . In contrast with the case of strained InxGa1-xAs layers deposited on GaAs substrates, no tendency for indium surface segregation has been detected i n the top cation layer. The atomic positions in the (2 x 4) surface unit ce ll are fully determined. (C) 1999 Elsevier Science B.V. All rights reserved .