The kinetics of thin film island growth at initial stages

The simulation of the early stages of thin film formation is performed usin g a phenomenological approach considering the surface diffusion of the adat oms and the migration of islands. The model describes the kinetics of low s urface coverage as well as of higher surface coverage. The effects of atom evaporation and island dissociation are not included in this model. The var iation of the phenomenological coefficients gives the possibility to obtain the time dependence of the main characteristics such as surface coverage, island density and average island size describing initial stages of the fil m growth. The surface roughening during deposition can also be considered b y the proposed model. The calculated curves are in good qualitative and qua ntitative agreement with the experimental results. (C) 1999 Elsevier Scienc e Ltd. All rights reserved.