CHARGE-CARRIER EXCLUSION IN INAS

The first observation of contact exclusion in InAs-based p(+)-p-p(+) s tructures at high temperatures is reported. To identify the process of nonequilibrium depletion of the base, attesting to exclusion of free charge carriers, the current-voltage characteristics, the kinetics of current establishment, and the negative luminescence in the spectral r egion of interband transitions were investigated. The practical aspect of this phenomenon is discussed. (C) 1997 American Institute of Physi cs.